NSF PAR Search | NSF Public Access Repository

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

Griffiths phase arising from local lattice distortion and spin glass above the Curie temperature in ${Ni}_{2} MnSb$ polycrystalline Heusler alloy

https://doi.org/10.1103/PhysRevB.109.224405

Tian, Fanghua; Zhao, Qizhong; Guo, Jiale; Zhang, Yin; Fang, Minxia; Chang, Tieyan; Dai, Zhiyong; Zhou, Chao; Cao, Kaiyan; Yang, Sen (June 2024, Physical Review B)
A room temperature exchange bias effect caused by the coexisting martensitic phase structures in Ni50Mn38Sb12−xGax polycrystalline Heusler alloys

https://doi.org/10.1063/5.0178839

Tian, Fanghua; Chang, Tieyan; Zhao, Qizhong; Guo, Jiale; Xian, Long; Cao, Kaiyan; Dai, Zhiyong; Zhang, Yin; Zhou, Chao; Yang, Sen (December 2023, Applied Physics Letters)

The exchange bias effect is the physical cornerstone of applications, such as spin valves, ultra-high-density data storage, and magnetic tunnel junctions. This work studied the room temperature exchange bias effect by constructing a Ni50Mn38Sb12−xGax alloy system with coexisting martensitic phase structures. The study found that the exchange bias effect shows a non-monotonic change with the variation of Ga composition at 300 K, and an obvious room temperature exchange bias effect appears in the alloys with coexisting phase structures of 4O and L10, which is due to the strong exchange coupling between ferromagnetic and antiferromagnetic. Further research on the exchange bias effect and temperature shows that the blocking temperature is 420 K, and the exchange bias can stably exist in a temperature range of ∼200 K around room temperature. This work provides a method to engineer exchange bias effects at room temperature.
more » « less
Full Text Available
Transition metal-doped chalcogenide perovskite magnetic semiconductor ${B a Z r S}_{3}$

https://doi.org/10.1016/j.jmmm.2022.169886

Yu, Zhonghai; Deng, Chenhua; Kong, Sen; Hui, Haolei; Guo, Jiale; Zhao, Qizhong; Tian, Fanghua; Zhou, Chao; Zhang, Yin; Yang, Sen; et al (December 2022, Journal of Magnetism and Magnetic Materials)

Full Text Available

Search for: All records